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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@IC= 6A *Good Linearity of hFE *High Switching Speed *Complement to Type 2SA1451 APPLICATIONS *Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 60 V 50 V 6 V 12 A 2 A 30 W .cn mi e IB B Base Current-Continuous PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance CONDITIONS IC= 50mA ; IB= 0 IC= 6A; IB= 0.3A B 2SC3709 MIN 50 TYP. MAX UNIT V 0.4 1.2 10 10 V V A A IC= 6A; IB= 0.3A B VCB= 60V; IE= 0 VEB= 6V; IC= 0 IC= 1A; VCE= 1V Current-Gain--Bandwidth Product Switching Times ton tstg tf Turn-on Time Storage Time Fall Time w w w. sem isc IC= 6A; VCE= 1V IC= 1A; VCE= 5V IB1= -IB2= 0.3A, RL= 5; VCC 30V, IE= 0; VCB= 10V; ftest= 1MHz .cn i 40 70 240 180 90 pF MHz 0.2 1.0 0.2 s s s hFE-1 Classifications O 70-140 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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